IXFB52N90P PDF and Equivalents Search

 

IXFB52N90P Specs and Replacement

Type Designator: IXFB52N90P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: PLUS264

IXFB52N90P substitution

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IXFB52N90P datasheet

 ..1. Size:121K  ixys
 ixfb52n90p.pdf pdf_icon

IXFB52N90P

VDSS = 900V IXFB52N90P PolarTM Power MOSFET ID25 = 52A HiPerFETTM RDS(on) 160m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M 900 V VGSS Continuous 30 V G (TAB) D VGSM ... See More ⇒

 9.1. Size:558K  ixys
 ixfb50n80q2.pdf pdf_icon

IXFB52N90P

HiPerFETTM IXFB 50N80Q2 VDSS = 800 V Power MOSFETs ID25 = 50 A RDS(on)= 0.15 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg trr 300 ns High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G (TAB) D VGS Conti... See More ⇒

Detailed specifications: IXFB210N20P, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, 50N06, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P

Keywords - IXFB52N90P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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