IXFB60N80P Specs and Replacement
Type Designator: IXFB60N80P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: PLUS264
IXFB60N80P substitution
- MOSFET ⓘ Cross-Reference Search
IXFB60N80P datasheet
ixfb60n80p.pdf
IXFB 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Continuous 30 ... See More ⇒
Detailed specifications: IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IRFP460, IXFB62N80Q3, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P, IXFC110N10P
Keywords - IXFB60N80P MOSFET specs
IXFB60N80P cross reference
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IXFB60N80P substitution
IXFB60N80P replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFB62N80Q3 | TPH8R008NH | CS540AR | STT4443
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