IXFB62N80Q3 MOSFET Datasheet: N-Ch, 800V, 62A. Full specification with pinout and replacement list

IXFB62N80Q3 Specs and Replacement

Type Designator: IXFB62N80Q3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: PLUS247

IXFB62N80Q3 substitution

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IXFB62N80Q3 datasheet

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IXFB 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Continuous 30 ... See More ⇒

Detailed specifications: IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IRFZ44, IXFB70N60Q2, IXFB72N55Q2, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P, IXFC110N10P, IXFC12N80P