All MOSFET. IXFB62N80Q3 Datasheet

 

IXFB62N80Q3 Datasheet and Replacement


   Type Designator: IXFB62N80Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 270 nC
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: PLUS247
 

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IXFB62N80Q3 Datasheet (PDF)

 9.1. Size:166K  ixys
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IXFB62N80Q3

IXFB 60N80PVDSS = 800 VPolarHVTM HiPerFETID25 = 60 APower MOSFET RDS(on) 140 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Continuous 30

Datasheet: IXFB30N120P , IXFB38N100Q2 , IXFB40N110P , IXFB44N100P , IXFB44N100Q3 , IXFB50N80Q2 , IXFB52N90P , IXFB60N80P , IRFZ44 , IXFB70N60Q2 , IXFB72N55Q2 , IXFB80N50Q2 , IXFB82N60P , IXFB82N60Q3 , IXFC10N80P , IXFC110N10P , IXFC12N80P .

History: MMBF4416A | NCE50NF130D | INK0012AM1 | 2SK3572-ZK

Keywords - IXFB62N80Q3 MOSFET datasheet

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