IXFB72N55Q2 PDF and Equivalents Search

 

IXFB72N55Q2 Specs and Replacement

Type Designator: IXFB72N55Q2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: PLUS264

IXFB72N55Q2 substitution

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IXFB72N55Q2 datasheet

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IXFB72N55Q2

HiPerFETTM VDSS = 550 V IXFB 72N55Q2 Power MOSFETs ID25 = 72 A Q-Class RDS(on)= 72 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150 C; RGS = 1 M... See More ⇒

Detailed specifications: IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2, IXFB52N90P, IXFB60N80P, IXFB62N80Q3, IXFB70N60Q2, IRF1404, IXFB80N50Q2, IXFB82N60P, IXFB82N60Q3, IXFC10N80P, IXFC110N10P, IXFC12N80P, IXFC13N50, IXFC14N60P

Keywords - IXFB72N55Q2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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