All MOSFET. IXFC15N80Q Datasheet

 

IXFC15N80Q Datasheet and Replacement


   Type Designator: IXFC15N80Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: ISOPLUS220
 

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IXFC15N80Q Datasheet (PDF)

 9.1. Size:229K  ixys
 ixfc14n60p.pdf pdf_icon

IXFC15N80Q

IXFC 14N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 8 APower MOSFET RDS(on) 630 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 600 VVDGR TJ

 9.2. Size:223K  ixys
 ixfc16n50p.pdf pdf_icon

IXFC15N80Q

IXFC 16N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 10 APower MOSFET RDS(on) 450 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedISOPLUS220TM (IXFC)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25 C to 150 C 500 VVDGR T

 9.3. Size:230K  ixys
 ixfc110n10p.pdf pdf_icon

IXFC15N80Q

IXFC 110N10P VDSS = 100 VPolarHVTM HiPerFETID25 = 60 APower MOSFET RDS(on) 17 m ISOPLUS220TMtrr 150 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 175 C 100 VVDGR TJ

Datasheet: IXFB82N60P , IXFB82N60Q3 , IXFC10N80P , IXFC110N10P , IXFC12N80P , IXFC13N50 , IXFC14N60P , IXFC14N80P , IRFB4115 , IXFC16N50P , IXFC16N80P , IXFC20N80P , IXFC22N60P , IXFC24N50 , IXFC26N50 , IXFC26N50P , IXFC30N60P .

History: MTM981400BBF

Keywords - IXFC15N80Q MOSFET datasheet

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