IXFC20N80P Specs and Replacement
Type Designator: IXFC20N80P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
Package: ISOPLUS220
IXFC20N80P substitution
- MOSFET ⓘ Cross-Reference Search
IXFC20N80P datasheet
ixfc20n80p ixfr20n80p.pdf
IXFC 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFR 20N80P ID25 = 10 A Power MOSFET RDS(on) 500 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 800 V E153432 VDGR TJ = 25 C to... See More ⇒
ixfc26n50p.pdf
IXFC 26N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS 220TM (Electrically Isolated Tab) trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 ... See More ⇒
ixfc22n60p.pdf
IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET RDS(on) 360 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR T... See More ⇒
Detailed specifications: IXFC110N10P, IXFC12N80P, IXFC13N50, IXFC14N60P, IXFC14N80P, IXFC15N80Q, IXFC16N50P, IXFC16N80P, 8205A, IXFC22N60P, IXFC24N50, IXFC26N50, IXFC26N50P, IXFC30N60P, IXFC36N50P, IXFC52N30P, IXFC60N20
Keywords - IXFC20N80P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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