IXFC22N60P MOSFET Datasheet: N-Ch, 600V, 12A. Full specification with pinout and replacement list

IXFC22N60P Specs and Replacement

Type Designator: IXFC22N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: ISOPLUS220

IXFC22N60P substitution

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IXFC22N60P datasheet

..1. Size:231K ixys
ixfc22n60p.pdf pdf_icon

IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET RDS(on) 360 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR T... See More ⇒

9.1. Size:175K ixys
ixfc26n50p.pdf pdf_icon

IXFC 26N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 15 A Power MOSFET RDS(on) 260 m ISOPLUS 220TM (Electrically Isolated Tab) trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 ... See More ⇒

9.2. Size:133K ixys
ixfc20n80p ixfr20n80p.pdf pdf_icon

IXFC 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFR 20N80P ID25 = 10 A Power MOSFET RDS(on) 500 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 800 V E153432 VDGR TJ = 25 C to... See More ⇒

Detailed specifications: IXFC12N80P, IXFC13N50, IXFC14N60P, IXFC14N80P, IXFC15N80Q, IXFC16N50P, IXFC16N80P, IXFC20N80P, 7N65, IXFC24N50, IXFC26N50, IXFC26N50P, IXFC30N60P, IXFC36N50P, IXFC52N30P, IXFC60N20, IXFC74N20P