All MOSFET. IXFC74N20P Datasheet

 

IXFC74N20P Datasheet and Replacement


   Type Designator: IXFC74N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: ISOPLUS220
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IXFC74N20P Datasheet (PDF)

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IXFC74N20P

IXFC 74N20P VDSS = 200 VPolarHTTM HiPerFETID25 = 35 APower MOSFETRDS(on) = 36 mISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Recovery Diode, AvalancheRatedISOPLUS 220TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1 M

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History: IRLM220A | IPI80N04S3-06 | SM9989DSO | GSM4936S | SHD225512 | IRHYS597Z30CM | ATM2N65TE

Keywords - IXFC74N20P MOSFET datasheet

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