IXFE180N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFE180N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 158 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 360 nC
Rise Time (tr): 250 nS
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: ISOPLUS227
IXFE180N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFE180N20 Datasheet (PDF)
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