All MOSFET. IXFE180N20 Datasheet

 

IXFE180N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFE180N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 158 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 360 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: ISOPLUS227

IXFE180N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFE180N20 Datasheet (PDF)

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