IXFE50N50 Specs and Replacement
Type Designator: IXFE50N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 180 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ISOPLUS227
IXFE50N50 substitution
- MOSFET ⓘ Cross-Reference Search
IXFE50N50 datasheet
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Detailed specifications: IXFE39N90, IXFE44N50Q, IXFE44N50QD2, IXFE44N50QD3, IXFE44N60, IXFE48N50Q, IXFE48N50QD2, IXFE48N50QD3, IRFB3607, IXFE55N50, IXFE73N30Q, IXFE80N50, IXFF24N100, IXFF80N50Q2, IXFG55N50, IXFH100N25P, IXFH102N15T
Keywords - IXFE50N50 MOSFET specs
IXFE50N50 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NTMFS4841N | ELM544599A | AP70WN2K8I | TK32A12N1 | SSA50R060S | LPSA3487
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