IXFG55N50 Specs and Replacement
Type Designator: IXFG55N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: ISO264
IXFG55N50 substitution
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IXFG55N50 datasheet
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Detailed specifications: IXFE48N50QD2 , IXFE48N50QD3 , IXFE50N50 , IXFE55N50 , IXFE73N30Q , IXFE80N50 , IXFF24N100 , IXFF80N50Q2 , STP80NF70 , IXFH100N25P , IXFH102N15T , IXFH10N100P , IXFH10N80P , IXFH110N10P , IXFH110N15T2 , IXFH110N25T , IXFH120N15P .
History: MTN15N50E3 | IXFK55N50F
Keywords - IXFG55N50 MOSFET specs
IXFG55N50 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MTN15N50E3 | IXFK55N50F
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