IXFG55N50 PDF and Equivalents Search

 

IXFG55N50 Specs and Replacement

Type Designator: IXFG55N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: ISO264

IXFG55N50 substitution

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IXFG55N50 datasheet

No PDF!

Detailed specifications: IXFE48N50QD2 , IXFE48N50QD3 , IXFE50N50 , IXFE55N50 , IXFE73N30Q , IXFE80N50 , IXFF24N100 , IXFF80N50Q2 , STP80NF70 , IXFH100N25P , IXFH102N15T , IXFH10N100P , IXFH10N80P , IXFH110N10P , IXFH110N15T2 , IXFH110N25T , IXFH120N15P .

Keywords - IXFG55N50 MOSFET specs

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