All MOSFET. IXFH120N15P Datasheet

 

IXFH120N15P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH120N15P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 600 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO247

IXFH120N15P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH120N15P Datasheet (PDF)

1.1. ixfh120n15p ixft120n15p.pdf Size:177K _ixys

IXFH120N15P
IXFH120N15P

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET ≤ Ω RDS(on) ≤ 16 mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200 ns ≤ ≤ N-Channel Enhancement Mode ≤ Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 150 V VDSS

2.1. ixfh120n25t ixft120n25t.pdf Size:180K _ixys

IXFH120N15P
IXFH120N15P

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T ≤ Ω RDS(on) ≤ Ω ≤ 23mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V TO-247

 4.1. ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf Size:278K _update-mosfet

IXFH120N15P
IXFH120N15P

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2   RDS(on)    310m     IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

4.2. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFH120N15P
IXFH120N15P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

 4.3. ixfh12n90p ixfv12n90p-s.pdf Size:179K _ixys

IXFH120N15P
IXFH120N15P

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ≤ Ω RDS(on) ≤ Ω ≤ 900mΩ ≤ Ω IXFV12N90PS ≤ Ω ≤ trr ≤ ≤ 300ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25°C to 150°C 900 V D (TAB) VDGR TJ

4.4. ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf Size:278K _ixys

IXFH120N15P
IXFH120N15P

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2   RDS(on)    310m     IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

 4.5. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

IXFH120N15P
IXFH120N15P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFM 10 N90 900 V 10 A 1.1 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFM 12 N90 900 V 12 A 0.9 Ω Ω Ω Ω Ω IXFH/IXFT 13 N90 900 V 13 A 0.8 Ω Ω Ω Ω N-Channel Enhancement Mode ≤ ≤ 250 ns ≤ ≤ High dv/dt, Low trr, HDMOSTM Family trr ≤ TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 1

4.6. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFH120N15P
IXFH120N15P

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

4.7. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

IXFH120N15P
IXFH120N15P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFM 10 N100 1000 V 10 A 1.20 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFM 12 N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode ≤ ≤ 250 ns ≤ ≤ High dv/dt, Low trr, HDMOSTM Family trr ≤ Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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