IXFH12N120 MOSFET Datasheet: N-Ch, 1200V, 12A. Full specification with pinout and replacement list

IXFH12N120 Specs and Replacement

Type Designator: IXFH12N120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO247

IXFH12N120 substitution

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IXFH12N120 datasheet

0.1. Size:176K ixys
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf pdf_icon

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1... See More ⇒

6.1. Size:570K ixys
ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf pdf_icon

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6.2. Size:144K ixys
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒

Detailed specifications: IXFH10N80P, IXFH110N10P, IXFH110N15T2, IXFH110N25T, IXFH120N15P, IXFH120N20P, IXFH12N100F, IXFH12N100P, SI2302, IXFH12N120P, IXFH12N50F, IXFH12N80P, IXFH12N90P, IXFH13N100, IXFH13N90, IXFH140N10P, IXFH14N100Q2