All MOSFET. IXFH160N15T Datasheet

 

IXFH160N15T Datasheet and Replacement


   Type Designator: IXFH160N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO247
 

 IXFH160N15T substitution

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IXFH160N15T Datasheet (PDF)

 8.1. Size:252K  ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFH160N15T

IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 8.2. Size:112K  ixys
ixfh16n90 ixfx16n90.pdf pdf_icon

IXFH160N15T

IXFH16N90 VDSS = 900 VHiPerFETTMIXFX16N90 ID25 = 16 APower MOSFETsRDS(on) = 0.65 WN-Channel Enhancement Modet 200 nsHigh dv/dt, Low t , HDMOSTM FamilyrrrrPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD(IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 8.3. Size:166K  ixys
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFH160N15T

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 8.4. Size:173K  ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

IXFH160N15T

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15

Datasheet: IXFH14N80P , IXFH150N15P , IXFH150N17T , IXFH150N17T2 , IXFH15N100P , IXFH15N100Q , IXFH15N100Q3 , IXFH15N80Q , STP65NF06 , IXFH160N15T2 , IXFH16N120P , IXFH16N50P , IXFH16N80P , IXFH16N90Q , IXFH170N10P , IXFH17N80Q , IXFH18N60P .

History: 2SK784 | SM6107PSU | CEU3120 | QM2401C1 | QM06N65F | TSM3548DCX6 | SIHFBC30A

Keywords - IXFH160N15T MOSFET datasheet

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