IXFH22N60P PDF and Equivalents Search

 

IXFH22N60P Specs and Replacement


   Type Designator: IXFH22N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247
 

 IXFH22N60P substitution

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IXFH22N60P datasheet

 ..1. Size:295K  ixys
 ixfh22n60p ixfv22n60p.pdf pdf_icon

IXFH22N60P

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 60... See More ⇒

 6.1. Size:336K  ixys
 ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf pdf_icon

IXFH22N60P

X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T... See More ⇒

 6.2. Size:168K  ixys
 ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf pdf_icon

IXFH22N60P

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 160m IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to ... See More ⇒

 7.1. Size:312K  ixys
 ixfh22n50p ixfv22n50p.pdf pdf_icon

IXFH22N60P

IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) 270 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

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Detailed specifications: IXFH17N80Q , IXFH18N60P , IXFH18N90P , IXFH20N100P , IXFH20N80P , IXFH21N50F , IXFH21N50Q , IXFH22N50P , IRF730 , IXFH22N60P3 , IXFH230N075T2 , IXFH230N10T , IXFH23N60Q , IXFH23N80Q , IXFH24N50Q , IXFH24N80P , IXFH24N90P .

History: AGM015N10LL | NTUD3169CZ | DH060N07D | BLF879P | AFN06N60T251T | 2SK3977 | RFD8P06E

Keywords - IXFH22N60P MOSFET specs

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