IXFH24N80P PDF and Equivalents Search

 

IXFH24N80P PDF Specs and Replacement


   Type Designator: IXFH24N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247
 

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IXFH24N80P PDF Specs

 ..1. Size:158K  ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf pdf_icon

IXFH24N80P

IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Con... See More ⇒

 7.1. Size:158K  ixys
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFH24N80P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to... See More ⇒

 7.2. Size:145K  ixys
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFH24N80P

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 ... See More ⇒

 7.3. Size:122K  ixys
ixft24n90p ixfh24n90p.pdf pdf_icon

IXFH24N80P

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM RDS(on) 420m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

Detailed specifications: IXFH22N50P , IXFH22N60P , IXFH22N60P3 , IXFH230N075T2 , IXFH230N10T , IXFH23N60Q , IXFH23N80Q , IXFH24N50Q , IRF540 , IXFH24N90P , IXFH26N50P , IXFH26N55Q , IXFH26N60P , IXFH28N50F , IXFH28N50Q , IXFH28N60P3 , IXFH30N40Q .

History: SSD02N65

Keywords - IXFH24N80P MOSFET specs

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