IXFH7N90Q Datasheet. Specs and Replacement

Type Designator: IXFH7N90Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO247

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IXFH7N90Q datasheet

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IXFH7N90Q

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM... See More ⇒

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IXFH7N90Q

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IXFH7N90Q

Polar TM HiPerFETTM VDSS = 1000V IXFA7N100P Power MOSFETs ID25 = 7A IXFP7N100P RDS(on) 1.9 IXFH7N100P N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Conti... See More ⇒

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 ixfh7n80 ixfm7n80.pdf pdf_icon

IXFH7N90Q

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C7 A TO-204 AA (IXFM... See More ⇒

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Detailed specifications: IXFH68N20, IXFH69N30P, IXFH6N100F, IXFH6N120, IXFH6N120P, IXFH70N20Q3, IXFH74N20, IXFH74N20P, AON7506, IXFH80N08, IXFH80N085, IXFH80N10, IXFH80N15Q, IXFH86N30T, IXFH88N20Q, IXFH88N30P, IXFH96N15P

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