IXFH80N08 Datasheet. Specs and Replacement

Type Designator: IXFH80N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO247

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IXFH80N08 datasheet

 0.1. Size:54K  ixys
 ixfh80n085 ixft80n085.pdf pdf_icon

IXFH80N08

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C80 A IL... See More ⇒

 7.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf pdf_icon

IXFH80N08

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

 7.2. Size:70K  ixys
 ixfh80n20q ixfk80n20q ixft80n20q.pdf pdf_icon

IXFH80N08

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi... See More ⇒

 7.3. Size:114K  ixys
 ixfh80n65x2.pdf pdf_icon

IXFH80N08

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH80N65X2 Power MOSFET ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =... See More ⇒

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Detailed specifications: IXFH69N30P, IXFH6N100F, IXFH6N120, IXFH6N120P, IXFH70N20Q3, IXFH74N20, IXFH74N20P, IXFH7N90Q, RFP50N06, IXFH80N085, IXFH80N10, IXFH80N15Q, IXFH86N30T, IXFH88N20Q, IXFH88N30P, IXFH96N15P, IXFH96N20P

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