IXFH9N80Q Datasheet. Specs and Replacement

Type Designator: IXFH9N80Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO247

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IXFH9N80Q datasheet

 6.1. Size:204K  ixys
 ixfh8n80 ixfh9n80.pdf pdf_icon

IXFH9N80Q

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*... See More ⇒

 9.1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFH9N80Q

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V... See More ⇒

 9.2. Size:318K  ixys
 ixfh96n15p ixfv96n15p.pdf pdf_icon

IXFH9N80Q

IXFH 96N15P VDSS = 150 V PolarHTTM HiPerFET IXFV 96N15P ID25 = 96 A Power MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D (TAB) S VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 ... See More ⇒

 9.3. Size:174K  ixys
 ixfh94n30t ixft94n30t.pdf pdf_icon

IXFH9N80Q

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 300V IXFT94N30T Power MOSFETs ID25 = 94A IXFH94N30T RDS(on) 36m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M 300 V TO-247 (I... See More ⇒

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Detailed specifications: IXFH80N085, IXFH80N10, IXFH80N15Q, IXFH86N30T, IXFH88N20Q, IXFH88N30P, IXFH96N15P, IXFH96N20P, CS150N04A8, IXFK102N30P, IXFK120N20P, IXFK120N25, IXFK120N25P, IXFK120N30T, IXFK140N20P, IXFK140N25T, IXFK140N30P

Keywords - IXFH9N80Q MOSFET specs

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