All MOSFET. IXFK32N100Q3 Datasheet

 

IXFK32N100Q3 Datasheet and Replacement


   Type Designator: IXFK32N100Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 195 nC
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO264
 

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IXFK32N100Q3 Datasheet (PDF)

 7.1. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK32N100Q3

IXFK 32N80P VDSS = 800 VPolarHVTM HiPerFETIXFX 32N80P ID25 = 32 APower MOSFET RDS(on) 270 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Contin

 7.2. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFK32N100Q3

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 7.3. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf pdf_icon

IXFK32N100Q3

VDSS ID25 RDS(on)IXFK 32N50QHiPerFETTMIXFX 32N50Q500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M

 7.4. Size:124K  ixys
 ixfk32n90p ixfx32n90p.pdf pdf_icon

IXFK32N100Q3

Advance Technical InformationPolarTM HiPerFETTM VDSS = 900VIXFK32N90PPower MOSFETsID25 = 32AIXFX32N90PRDS(on)

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