All MOSFET. IXFK32N80P Datasheet

 

IXFK32N80P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFK32N80P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 830 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO264

IXFK32N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFK32N80P Datasheet (PDF)

1.1. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys

IXFK32N80P
IXFK32N80P

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D

3.1. ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf Size:192K _ixys

IXFK32N80P
IXFK32N80P

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 600 600 V G VDGR TJ = 25C to 150C; RGS = 1 M? 600 600

3.2. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys

IXFK32N80P
IXFK32N80P

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

 3.3. ixfk32n90p ixfx32n90p.pdf Size:124K _ixys

IXFK32N80P
IXFK32N80P

Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P Ω RDS(on) < 300mΩ Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 900 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V Tab VGSS Continuous ±30 V VGSM Tr

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
Back to Top

 


IXFK32N80P
  IXFK32N80P
  IXFK32N80P
  IXFK32N80P
 

social 

LIST

Last Update

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

 
Back to Top