All MOSFET. 3N190 Datasheet

 

3N190 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3N190
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6.5 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: TO99

 3N190 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N190 Datasheet (PDF)

 ..1. Size:30K  1
 3n190 3n191.pdf

3N190 3N190

Dual P-ChannelEnhancement Mode MOSFETCORPORATIONGeneral Purpose Amplifier3N190 / 3N191FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) Very High Input Impedance High Gate Breakdown 3N190-3N191 Drain-Source or Drain-Gate Voltage (Note 1) Low Capacitance 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Datasheet: 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , IRLB4132 , 3N191 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 .

 

 
Back to Top