All MOSFET. IXFK44N80P Datasheet

 

IXFK44N80P Datasheet and Replacement


   Type Designator: IXFK44N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 198 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO264
 

 IXFK44N80P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFK44N80P Datasheet (PDF)

 ..1. Size:233K  ixys
 ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFK44N80P

PolarTMIXFK44N80P VDSS = 800VHiperFETTMID25 = 44AIXFX44N80PPower MOSFET RDS(on) 190m N-Channel Enhancement ModeTO-264 (IXFK)Avalanche RatedFast Intrinsic DiodeGDSSymbol Test Conditions Maximum RatingsTabVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C, RGS = 1M 800 VPLUS247 (IXFX)VGSS Continuous 30

 7.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFK44N80P

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 7.2. Size:296K  ixys
 ixfh44n50p ixfk44n50p ixft44n50p.pdf pdf_icon

IXFK44N80P

IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500

 7.3. Size:104K  ixys
 ixfx44n60 ixfk44n60.pdf pdf_icon

IXFK44N80P

HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite

SHOW MORE

Datasheet: IXFK38N80Q2 , IXFK40N50Q2 , IXFK40N90P , IXFK420N10T , IXFK44N50F , IXFK44N50P , IXFK44N50Q , IXFK44N55Q , IRFP260N , IXFK44N80Q3 , IXFK48N55 , IXFK48N60P , IXFK48N60Q3 , IXFK520N075T2 , IXFK52N60Q2 , IXFK55N50F , IXFK60N55Q2 .

History: VQ1000J

Keywords - IXFK44N80P MOSFET datasheet

 IXFK44N80P cross reference
 IXFK44N80P equivalent finder
 IXFK44N80P lookup
 IXFK44N80P substitution
 IXFK44N80P replacement

 

 
Back to Top

 


 
.