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IXFK44N80Q3 Spec and Replacement


   Type Designator: IXFK44N80Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO264

 IXFK44N80Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK44N80Q3 Specs

 5.1. Size:233K  ixys
 ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFK44N80Q3

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30... See More ⇒

 7.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFK44N80Q3

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

 7.2. Size:296K  ixys
 ixfh44n50p ixfk44n50p ixft44n50p.pdf pdf_icon

IXFK44N80Q3

IXFH 44N50P VDSS = 500 V PolarHVTM HiPerFET IXFK 44N50P ID25 = 44 A Power MOSFET IXFT 44N50P RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M 500 ... See More ⇒

 7.3. Size:104K  ixys
 ixfx44n60 ixfk44n60.pdf pdf_icon

IXFK44N80Q3

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C44 A TO-264 AA (IXFK) IDM TC = 25 C, pulse width limite... See More ⇒

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Detailed specifications: IXFK40N50Q2 , IXFK40N90P , IXFK420N10T , IXFK44N50F , IXFK44N50P , IXFK44N50Q , IXFK44N55Q , IXFK44N80P , IRFB4110 , IXFK48N55 , IXFK48N60P , IXFK48N60Q3 , IXFK520N075T2 , IXFK52N60Q2 , IXFK55N50F , IXFK60N55Q2 , IXFK62N25 .

Keywords - IXFK44N80Q3 MOSFET specs

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