IXFK62N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFK62N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Id|ⓘ - Maximum Drain Current: 62 A
Qgⓘ - Total Gate Charge: 240 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO264
IXFK62N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFK62N25 Datasheet (PDF)
ixfk64n60p ixfx64n60p.pdf
IXFK 64N60PVDSS = 600 VPolarHVTM HiPerFETIXFX 64N60PID25 = 64 APower MOSFET RDS(on) 96 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Contin
ixfk64n50p ixfx64n50p.pdf
IXFK 64N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 64N50P ID25 = 64 APower MOSFET RDS(on) 85 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo
ixfh60n25q ixfk60n25q ixft60n25q.pdf
Advanced Technical InformationIXFH 60N25QHiPerFETTMVDSS = 250 VIXFK 60N25QPower MOSFETs ID25 = 60 AIXFT 60N25QQ-Class RDS(on) = 47 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 MW 250
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMN66D0LT
History: DMN66D0LT
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918