All MOSFET. IXFL34N100 Datasheet

 

IXFL34N100 Datasheet and Replacement


   Type Designator: IXFL34N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: ISOPLUS264
 

 IXFL34N100 substitution

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IXFL34N100 Datasheet (PDF)

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IXFL34N100

IXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsID25 = 30 AID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TMISOPLUS264TM

Datasheet: IXFK80N60P3 , IXFK88N20Q , IXFK88N30P , IXFK94N50P2 , IXFK98N50P3 , IXFL100N50P , IXFL30N120P , IXFL32N120P , IRFB3607 , IXFL36N110P , IXFL38N100P , IXFL38N100Q2 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 .

History: IPD060N03L

Keywords - IXFL34N100 MOSFET datasheet

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