IXFL60N60 Specs and Replacement
Type Designator: IXFL60N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 694 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: ISOPLUS264
IXFL60N60 substitution
- MOSFET ⓘ Cross-Reference Search
IXFL60N60 datasheet
ixfl60n80p.pdf
IXFL 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 150 m ISOPLUS264TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM (IXFL) ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR T... See More ⇒
Detailed specifications: IXFL36N110P , IXFL38N100P , IXFL38N100Q2 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , CS150N03A8 , IXFL60N80P , IXFL70N60Q2 , IXFL80N50Q2 , IXFL82N60P , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 .
History: FCP260N60E
Keywords - IXFL60N60 MOSFET specs
IXFL60N60 cross reference
IXFL60N60 equivalent finder
IXFL60N60 pdf lookup
IXFL60N60 substitution
IXFL60N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FCP260N60E
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