IXFL60N60 Datasheet and Replacement
Type Designator: IXFL60N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 694 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 380 nC
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: ISOPLUS264
IXFL60N60 substitution
IXFL60N60 Datasheet (PDF)
7.1. Size:198K ixys
ixfl60n80p.pdf
ixfl60n80p.pdf
IXFL 60N80PVDSS = 800 VPolarHVTM HiPerFETID25 = 40 APower MOSFET RDS(on) 150 m ISOPLUS264TMtrr 250 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTM (IXFL)ISOPLUS264Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 800 VVDGR T
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