IXFL70N60Q2 Spec and Replacement
Type Designator: IXFL70N60Q2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: ISOPLUS264
IXFL70N60Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFL70N60Q2 Specs
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Detailed specifications: IXFL38N100Q2 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , IXFL60N60 , IXFL60N80P , AON7506 , IXFL80N50Q2 , IXFL82N60P , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 , IXFN100N50P , IXFN100N50Q3 .
Keywords - IXFL70N60Q2 MOSFET specs
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