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IXFL82N60P Spec and Replacement


   Type Designator: IXFL82N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: ISOPLUS264

 IXFL82N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFL82N60P Specs

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IXFL82N60P

IXFL 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 78 m ISOPLUS264TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISOPLUS264 (IXFL) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25... See More ⇒

Detailed specifications: IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , IXFL60N60 , IXFL60N80P , IXFL70N60Q2 , IXFL80N50Q2 , IRFP450 , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 , IXFN100N50P , IXFN100N50Q3 , IXFN102N30P , IXFN110N60P3 .

Keywords - IXFL82N60P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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