All MOSFET. IXFL82N60P Datasheet

 

IXFL82N60P Datasheet and Replacement


   Type Designator: IXFL82N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: ISOPLUS264
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IXFL82N60P Datasheet (PDF)

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IXFL82N60P

IXFL 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 78 m ISOPLUS264TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTM ISOPLUS264 (IXFL)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - IXFL82N60P MOSFET datasheet

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