IXFL82N60P Datasheet. Specs and Replacement

Type Designator: IXFL82N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: ISOPLUS264

IXFL82N60P substitution

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IXFL82N60P datasheet

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IXFL82N60P

IXFL 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 78 m ISOPLUS264TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISOPLUS264 (IXFL) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25... See More ⇒

Detailed specifications: IXFL40N110P, IXFL44N100P, IXFL44N60, IXFL44N80, IXFL60N60, IXFL60N80P, IXFL70N60Q2, IXFL80N50Q2, IRFP450, IXFN100N10S1, IXFN100N10S2, IXFN100N10S3, IXFN100N20, IXFN100N50P, IXFN100N50Q3, IXFN102N30P, IXFN110N60P3

Keywords - IXFL82N60P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.