All MOSFET. IXFL82N60P Datasheet

 

IXFL82N60P Datasheet and Replacement


   Type Designator: IXFL82N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: ISOPLUS264
 

 IXFL82N60P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFL82N60P Datasheet (PDF)

 ..1. Size:205K  ixys
 ixfl82n60p.pdf pdf_icon

IXFL82N60P

IXFL 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 78 m ISOPLUS264TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTM ISOPLUS264 (IXFL)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25

Datasheet: IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , IXFL60N60 , IXFL60N80P , IXFL70N60Q2 , IXFL80N50Q2 , IRF1407 , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 , IXFN100N50P , IXFN100N50Q3 , IXFN102N30P , IXFN110N60P3 .

History: SM5A24NSU | IPA60R280CFD7 | SVGP157R5NT | IXFH42N50P2 | SIHFDC20

Keywords - IXFL82N60P MOSFET datasheet

 IXFL82N60P cross reference
 IXFL82N60P equivalent finder
 IXFL82N60P lookup
 IXFL82N60P substitution
 IXFL82N60P replacement

 

 
Back to Top

 


 
.