All MOSFET. IXFN102N30P Datasheet

 

IXFN102N30P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN102N30P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 570 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 224 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOT227

 IXFN102N30P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN102N30P Datasheet (PDF)

 8.1. Size:99K  ixys
 ixfn100n10s1-s2-s3.pdf

IXFN102N30P IXFN102N30P

HiPerFETTM Power MOSFETs IXFN 100N10S1VDSS = 100 VIXFN 100N10S2with Schottky DiodesID25 = 100 AIXFN 100N10S3RDS(on) = 15 mm~~I=_=C==_=`~=pjmpI=mc`=C=j=`=`S2QEaFQEaFS1 S3QEaFPEhFNEdFNEdFNEdFPE^FOEpFOEpFOIPEpFSymbol Test Conditions Maximum Rati

 8.2. Size:111K  ixys
 ixfk90n20 ixfn100n20 ixfn106n20.pdf

IXFN102N30P IXFN102N30P

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

 8.3. Size:70K  ixys
 ixfn100n25.pdf

IXFN102N30P IXFN102N30P

Advanced Technical InformationHiPerFETTM IXFN 100N25 VDSS = 250 VID25 = 100 APower MOSFETsSingle MOSFET Die RDS(on) = 27 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 250 VSVDGR TJ = 25C to 150C; RGS = 1 MW 250 VGVGS Continuous 20 V

 8.4. Size:152K  ixys
 ixfn100n50p.pdf

IXFN102N30P IXFN102N30P

IXFN 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 90 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 500

 8.5. Size:112K  ixys
 ixfk100n20 ixfn90n20 ixfn106n20.pdf

IXFN102N30P IXFN102N30P

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top