IXFN30N110P Datasheet. Specs and Replacement

Type Designator: IXFN30N110P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 695 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT227B

IXFN30N110P substitution

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IXFN30N110P datasheet

 9.1. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFN30N110P

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒

 9.2. Size:128K  ixys
 ixfn39n90.pdf pdf_icon

IXFN30N110P

VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs RDS(on) = 0.22 Single MOSFET Die D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 900 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 900 ... See More ⇒

 9.3. Size:128K  ixys
 ixfn36n100.pdf pdf_icon

IXFN30N110P

HiPerFETTM IXFN 36N100 V = 1000V DSS Power MOSFETs ID25 = 36A Single Die MOSFET RDS(on) = 0.24 D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM ... See More ⇒

 9.4. Size:128K  ixys
 ixfn34n80.pdf pdf_icon

IXFN30N110P

HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi... See More ⇒

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Detailed specifications: IXFN23N100, IXFN240N15T2, IXFN24N100F, IXFN26N100P, IXFN26N120P, IXFN27N80Q, IXFN280N085, IXFN300N10P, IRF9640, IXFN30N120P, IXFN320N17T2, IXFN32N100P, IXFN32N100Q3, IXFN32N120, IXFN32N120P, IXFN32N80P, IXFN340N06

Keywords - IXFN30N110P MOSFET specs

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