All MOSFET. IXFN340N06 Datasheet

 

IXFN340N06 Datasheet and Replacement


   Type Designator: IXFN340N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 340 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: SOT227B
 

 IXFN340N06 substitution

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IXFN340N06 Datasheet (PDF)

 5.1. Size:104K  ixys
 ixfn340n07.pdf pdf_icon

IXFN340N06

HiPerFETTMIXFN 340N07 VDSS = 70 VPower MOSFETsID25 = 340 ASingle Die MOSFET RDS(on) = 4 mD trr 200 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C70 VSVDGR TJ = 25C to 150C; RGS = 1 M 70 VGVGS Co

 8.1. Size:128K  ixys
 ixfn34n80.pdf pdf_icon

IXFN340N06

HiPerFETTM Power MOSFETsIXFN 34N80 VDSS = 800 VSingle DieMOSFETID25 = 34 ARDS(on) = 0.24 WN-Channel Enhancement Mode DAvalanche Rated, High dv/dt, Low trrtrr 250 nsPreliminary data sheetSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 800 VSVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 VVGSM Transi

 8.2. Size:570K  ixys
 ixfn34n100.pdf pdf_icon

IXFN340N06

IXFN 34N100 VDSS = 1000VHiPerFETTMID25 = 34APower MOSFETsRDS(on) = 0.28Single Die MOSFETDN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trr GSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM Tran

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Datasheet: IXFN30N110P , IXFN30N120P , IXFN320N17T2 , IXFN32N100P , IXFN32N100Q3 , IXFN32N120 , IXFN32N120P , IXFN32N80P , AO3407 , IXFN34N100 , IXFN360N10T , IXFN360N15T2 , IXFN36N110P , IXFN38N100P , IXFN38N100Q2 , IXFN38N80Q2 , IXFN40N110P .

Keywords - IXFN340N06 MOSFET datasheet

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