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IXFN40N90P Spec and Replacement


   Type Designator: IXFN40N90P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 695 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT227

 IXFN40N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN40N90P Specs

 ..1. Size:113K  ixys
ixfn40n90p.pdf pdf_icon

IXFN40N90P

Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN40N90P ID25 = 33A HiPerFETTM RDS(on) 210m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒

 7.1. Size:120K  ixys
ixfn40n110q3.pdf pdf_icon

IXFN40N90P

Advance Technical Information HiperFETTM VDSS = 1100V IXFN40N110Q3 Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V S VGSS Continuous 30 V D V... See More ⇒

 9.1. Size:179K  ixys
ixfn420n10t.pdf pdf_icon

IXFN40N90P

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFN420N10T HiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 ... See More ⇒

 9.2. Size:162K  ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFN40N90P

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

Detailed specifications: IXFN34N100 , IXFN360N10T , IXFN360N15T2 , IXFN36N110P , IXFN38N100P , IXFN38N100Q2 , IXFN38N80Q2 , IXFN40N110P , 20N60 , IXFN420N10T , IXFN44N100P , IXFN44N100Q3 , IXFN44N50Q , IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 .

History: SI4632DY | IXFN44N50Q | IXFN44N100Q3 | SI5853 | IXFN40N110P

Keywords - IXFN40N90P MOSFET specs

 IXFN40N90P cross reference
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