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IXFN50N80Q2 Spec and Replacement


   Type Designator: IXFN50N80Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT227

 IXFN50N80Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN50N80Q2 Specs

 7.1. Size:121K  ixys
 ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf pdf_icon

IXFN50N80Q2

VDSS ID25 RDS(on) trr HiPerFETTM Power MOSFET IXFN 55N50 500V 55A 80m 250ns IXFN 50N50 500V 50A 100m 250ns IXFK 55N50 500V 55A 80m 250ns Single Die MOSFET IXFK 50N50 500V 50A 100m 250ns Preliminary data sheet TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFN IXFK IXFK IXFN 55N50 50N50 55N50 50N50 VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C to 150 C... See More ⇒

 9.1. Size:577K  ixys
 ixfk55n50 ixfx55n50 ixfn55n50.pdf pdf_icon

IXFN50N80Q2

VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET RDS(on) = 90m IXFN 55N50 250 ns trr Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25 C55 A E IDM TC = 2... See More ⇒

 9.2. Size:104K  ixys
 ixfn55n50f.pdf pdf_icon

IXFN50N80Q2

Advance Technical Information HiPerRFTM IXFN 55N50F VDSS = 500 V Power MOSFETs ID25 = 55 A F-Class MegaHertz Switching RDS(on) = 85 m D N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic R G g High dV/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to ... See More ⇒

 9.3. Size:113K  ixys
 ixfn52n90p.pdf pdf_icon

IXFN50N80Q2

Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN52N90P ID25 = 43A HiPerFETTM RDS(on) 160m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25 C to 150 C 900 V G VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

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Detailed specifications: IXFN44N100Q3 , IXFN44N50Q , IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 , IXFN48N55 , IXFN48N60P , IRFP260N , IXFN520N075T2 , IXFN52N90P , IXFN56N90P , IXFN60N80P , IXFN62N80Q3 , IXFN64N50P , IXFN64N50PD2 , IXFN64N50PD3 .

Keywords - IXFN50N80Q2 MOSFET specs

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