IXFN50N80Q2 Datasheet and Replacement. Cross Reference Search

IXFN50N80Q2 Datasheet (PDF)

7.1. Size:121K ixys
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VDSS ID25 RDS(on) trrHiPerFETTMPower MOSFET IXFN 55N50 500V 55A 80m 250nsIXFN 50N50 500V 50A 100m 250nsIXFK 55N50 500V 55A 80m 250nsSingle Die MOSFETIXFK 50N50 500V 50A 100m 250nsPreliminary data sheetTO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings IXFNIXFK IXFK IXFN55N50 50N50 55N50 50N50VDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C to 150C

9.1. Size:577K ixys
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VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2

9.2. Size:104K ixys
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Advance Technical InformationHiPerRFTM IXFN 55N50F VDSS = 500 VPower MOSFETs ID25 = 55 AF-Class: MegaHertz SwitchingRDS(on) = 85 mDN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RGgHigh dV/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to

9.3. Size:113K ixys
ixfn52n90p.pdf pdf_icon

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFN52N90PID25 = 43AHiPerFETTM RDS(on) 160m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 150C 900 VGVDGR TJ = 25C to 150C, RGS

Datasheet: IXFN44N100Q3 , IXFN44N50Q , IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 , IXFN48N55 , IXFN48N60P , 10N60 , IXFN520N075T2 , IXFN52N90P , IXFN56N90P , IXFN60N80P , IXFN62N80Q3 , IXFN64N50P , IXFN64N50PD2 , IXFN64N50PD3 .