IXFN60N80P Datasheet. Specs and Replacement
Type Designator: IXFN60N80P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1040 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT227B
IXFN60N80P substitution
- MOSFET ⓘ Cross-Reference Search
IXFN60N80P datasheet
ixfn60n80p.pdf
IXFN 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 53 A Power MOSFET RDS(on) 140 m trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 800 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒
ixfn64n60p.pdf
VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET RDS(on) 96 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S... See More ⇒
ixfn64n50p.pdf
IXFN 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 61 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G... See More ⇒
Detailed specifications: IXFN48N50Q, IXFN48N50U2, IXFN48N55, IXFN48N60P, IXFN50N80Q2, IXFN520N075T2, IXFN52N90P, IXFN56N90P, 10N60, IXFN62N80Q3, IXFN64N50P, IXFN64N50PD2, IXFN64N50PD3, IXFN64N60P, IXFN66N50Q2, IXFN70N60Q2, IXFN72N55Q2
Keywords - IXFN60N80P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
