IXFN80N50P Datasheet. Specs and Replacement

Type Designator: IXFN80N50P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 700 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT227B

IXFN80N50P substitution

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IXFN80N50P datasheet

 ..1. Size:157K  ixys
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IXFN80N50P

IXFN 80N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 66 A Power MOSFET RDS(on) 65 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V S ... See More ⇒

 5.1. Size:572K  ixys
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IXFN80N50P

IXFN 80N50 VDSS = 500 V HiPerFETTM ID25 = 80 A Power MOSFETs RDS(on) = 55 m Single Die MOSFET D trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G ... See More ⇒

 9.1. Size:152K  ixys
 ixfn82n60p.pdf pdf_icon

IXFN80N50P

IXFN 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 75 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 600 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M 600... See More ⇒

Detailed specifications: IXFN64N50PD2, IXFN64N50PD3, IXFN64N60P, IXFN66N50Q2, IXFN70N60Q2, IXFN72N55Q2, IXFN73N30Q, IXFN80N48, 2SK3878, IXFN80N50Q2, IXFN80N50Q3, IXFN80N60P3, IXFN82N60P, IXFN82N60Q3, IXFP05N100M, IXFP102N15T, IXFP10N60P

Keywords - IXFN80N50P MOSFET specs

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