3N212 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 3N212
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 27 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.2 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO72

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