All MOSFET. IXFP3N120 Datasheet

 

IXFP3N120 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP3N120

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 300 nS

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: TO220

IXFP3N120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFP3N120 Datasheet (PDF)

1.1. ixfa3n120 ixfp3n120.pdf Size:565K _ixys

IXFP3N120
IXFP3N120

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs ? RDS(on) = 4.5 ? ? ? ? ? ? trr ? 300 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V D (TAB) VGS Continuous 20 V G D VGSM Trans

4.1. ixfp3n50pm.pdf Size:107K _ixys

IXFP3N120
IXFP3N120

Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET ? ? RDS(on) ? 2.0 ? ? ? ? ? ? ? (Electrically Isolated Tab) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to

 5.1. ixfa36n30p3 ixfp36n30p3.pdf Size:155K _ixys

IXFP3N120
IXFP3N120

Preliminary Technical Information Polar3 TM HiPerFETTM VDSS = 300V IXFA36N30P3 Power MOSFET ID25 = 36A IXFP36N30P3   RDS(on)    110m     N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 300 V TO-220AB (IXFP) VDGR TJ = 25C to 150

5.2. ixfa30n60x ixfp30n60x.pdf Size:206K _ixys

IXFP3N120
IXFP3N120

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X   RDS(on)    155m     N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M

Datasheet: IXFP12N50PM , IXFP130N10T , IXFP130N10T2 , IXFP14N60P , IXFP16N50P , IXFP180N10T2 , IXFP22N60P3 , IXFP230N075T2 , STP75NF75 , IXFP3N50PM , IXFP3N80 , IXFP4N100P , IXFP4N100PM , IXFP4N100Q , IXFP4N100QM , IXFP5N100P , IXFP5N50PM .

 
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