IXFP3N120 Datasheet. Specs and Replacement

Type Designator: IXFP3N120  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO220

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IXFP3N120 datasheet

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 ixfa3n120 ixfp3n120.pdf pdf_icon

IXFP3N120

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs RDS(on) = 4.5 trr 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V D (TAB) VGS Conti... See More ⇒

 8.1. Size:107K  ixys
 ixfp3n50pm.pdf pdf_icon

IXFP3N120

Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET RDS(on) 2.0 (Electrically Isolated Tab) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C t... See More ⇒

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 ixfa36n30p3 ixfp36n30p3.pdf pdf_icon

IXFP3N120

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 ixfp36n20x3m.pdf pdf_icon

IXFP3N120

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP36N20X3M Power MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D VDSS TJ = 25 C to 150 C 200 V S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D =... See More ⇒

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Detailed specifications: IXFP12N50PM, IXFP130N10T, IXFP130N10T2, IXFP14N60P, IXFP16N50P, IXFP180N10T2, IXFP22N60P3, IXFP230N075T2, 12N60, IXFP3N50PM, IXFP3N80, IXFP4N100P, IXFP4N100PM, IXFP4N100Q, IXFP4N100QM, IXFP5N100P, IXFP5N50PM

Keywords - IXFP3N120 MOSFET specs

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