All MOSFET. IXFP4N100P Datasheet

 

IXFP4N100P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP4N100P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 26 nC

Rise Time (tr): 300 nS

Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm

Package: TO220

IXFP4N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFP4N100P Datasheet (PDF)

4.1. ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Size:163K _ixys

IXFP4N100P
IXFP4N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 2.2Ω ≤ Ω ≤ Ω IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, RG

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
Back to Top