IXFP4N100P Datasheet. Specs and Replacement

Type Designator: IXFP4N100P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: TO220

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IXFP4N100P datasheet

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IXFP4N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG... See More ⇒

Detailed specifications: IXFP14N60P, IXFP16N50P, IXFP180N10T2, IXFP22N60P3, IXFP230N075T2, IXFP3N120, IXFP3N50PM, IXFP3N80, AO4407A, IXFP4N100PM, IXFP4N100Q, IXFP4N100QM, IXFP5N100P, IXFP5N50PM, IXFP6N120P, IXFP76N15T2, IXFP7N100P

Keywords - IXFP4N100P MOSFET specs

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