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IXFP4N100P Spec and Replacement


   Type Designator: IXFP4N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: TO220

 IXFP4N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP4N100P Specs

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IXFP4N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG... See More ⇒

Detailed specifications: IXFP14N60P , IXFP16N50P , IXFP180N10T2 , IXFP22N60P3 , IXFP230N075T2 , IXFP3N120 , IXFP3N50PM , IXFP3N80 , AON7506 , IXFP4N100PM , IXFP4N100Q , IXFP4N100QM , IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P .

Keywords - IXFP4N100P MOSFET specs

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