All MOSFET. IXFP4N100Q Datasheet


IXFP4N100Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP4N100Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220

IXFP4N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFP4N100Q Datasheet (PDF)

4.1. ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf Size:163K _ixys


Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 2.2Ω ≤ Ω ≤ Ω IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, RG

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