IXFP4N100Q MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFP4N100Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39 nC
Rise Time (tr): 250 nS
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220
IXFP4N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFP4N100Q Datasheet (PDF)
4.1. ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf 
Size:163K _ixys
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 2.2Ω ≤ Ω ≤ Ω IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, RG
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
