All MOSFET. IXFP7N80P Datasheet

 

IXFP7N80P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP7N80P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 1.44 Ohm

Package: TO220

IXFP7N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFP7N80P Datasheet (PDF)

4.1. ixfa7n60p3 ixfp7n60p3.pdf Size:159K _ixys

IXFP7N80P
IXFP7N80P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 1.15Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 600 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-220AB

5.1. ixfa76n15t2 ixfp76n15t2.pdf Size:180K _ixys

IXFP7N80P
IXFP7N80P

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 ? ? RDS(on) ? ? ? 20m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25C to 175C 150 V TO-220AB (IXFP) VDGR TJ = 25C to 175C, RGS = 1M? 150 V VGSS Continuous

Datasheet: IXFP4N100PM , IXFP4N100Q , IXFP4N100QM , IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P , IRF9530 , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , IXFQ24N50P2 , IXFQ28N60P3 .

 

 
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