All MOSFET. IXFQ50N60P3 Datasheet

 

IXFQ50N60P3 Datasheet and Replacement


   Type Designator: IXFQ50N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TO3P
 

 IXFQ50N60P3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFQ50N60P3 Datasheet (PDF)

 5.1. Size:184K  ixys
 ixfh50n60x ixfq50n60x ixft50n60x.pdf pdf_icon

IXFQ50N60P3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1

 7.1. Size:139K  ixys
 ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf pdf_icon

IXFQ50N60P3

Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD

Datasheet: IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , IXFQ24N50P2 , IXFQ28N60P3 , IRFB31N20D , IXFQ60N50P3 , IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 .

History: NDF11N50Z

Keywords - IXFQ50N60P3 MOSFET datasheet

 IXFQ50N60P3 cross reference
 IXFQ50N60P3 equivalent finder
 IXFQ50N60P3 lookup
 IXFQ50N60P3 substitution
 IXFQ50N60P3 replacement

 

 
Back to Top

 


 
.