All MOSFET. IXFQ60N50P3 Datasheet

 

IXFQ60N50P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFQ60N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO3P

 IXFQ60N50P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFQ60N50P3 Datasheet (PDF)

 7.1. Size:288K  ixys
 ixfa60n25x3 ixfp60n25x3 ixfq60n25x3.pdf

IXFQ60N50P3 IXFQ60N50P3

X3-Class HiPerFETTM VDSS = 250VIXFA60N25X3Power MOSFET ID25 = 60AIXFP60N25X3 RDS(on) 23m IXFQ60N25X3N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 250 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Co

 7.2. Size:166K  ixys
 ixfh60n60x ixfq60n60x.pdf

IXFQ60N50P3 IXFQ60N50P3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFQ60N60XPower MOSFET ID25 = 60AIXFH60N60X RDS(on) 55m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXFQ)Fast Intrinsic DiodeGDSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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