IXFR100N25 Datasheet. Specs and Replacement
Type Designator: IXFR100N25 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 87 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: ISOPLUS247
IXFR100N25 substitution
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IXFR100N25 datasheet
ixfr102n30p.pdf
VDSS = 300 V IXFR 102N30P PolarHTTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 36 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 300 V E153432 VDGR TJ = 25 C to 1... See More ⇒
ixfr10n100f ixfr12n100f.pdf
VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TM IXFR 10N100F 1000 V 9 A 1.20 F-Class MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol ... See More ⇒
ixfr10n100q ixfr12n100q.pdf
Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 1000 V ... See More ⇒
Detailed specifications: IXFQ10N80P, IXFQ12N80P, IXFQ14N80P, IXFQ22N60P3, IXFQ24N50P2, IXFQ28N60P3, IXFQ50N60P3, IXFQ60N50P3, IRFZ24N, IXFR102N30P, IXFR140N20P, IXFR140N30P, IXFR14N100Q2, IXFR150N15, IXFR15N100Q3, IXFR16N120P, IXFR180N06
Keywords - IXFR100N25 MOSFET specs
IXFR100N25 cross reference
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IXFR100N25 substitution
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