IXFR38N80Q2 Datasheet. Specs and Replacement

Type Designator: IXFR38N80Q2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 190 nC

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: ISOPLUS247

IXFR38N80Q2 substitution

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IXFR38N80Q2 datasheet

 9.1. Size:59K  ixys
 ixfr34n80.pdf pdf_icon

IXFR38N80Q2

IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) RDS(on) = 0.24 trr 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS ... See More ⇒

 9.2. Size:248K  ixys
 ixfc36n50p ixfr36n50p.pdf pdf_icon

IXFR38N80Q2

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET RDS(on) 190 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ ... See More ⇒

 9.3. Size:144K  ixys
 ixfr36n60p.pdf pdf_icon

IXFR38N80Q2

IXFR 36N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 20 A Power MOSFET RDS(on) 200 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 9.4. Size:135K  ixys
 ixfc30n60p ixfr30n60p.pdf pdf_icon

IXFR38N80Q2

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET RDS(on) 250 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to... See More ⇒

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Detailed specifications: IXFR30N60P, IXFR32N100P, IXFR32N100Q3, IXFR32N80P, IXFR32N80Q3, IXFR34N80, IXFR36N50P, IXFR36N60P, IRF540N, IXFR40N50Q2, IXFR40N90P, IXFR44N50P, IXFR44N50Q, IXFR44N60, IXFR44N80P, IXFR48N50Q, IXFR48N60P

Keywords - IXFR38N80Q2 MOSFET specs

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