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IXFR38N80Q2 Spec and Replacement


   Type Designator: IXFR38N80Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: ISOPLUS247

 IXFR38N80Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR38N80Q2 Specs

 9.1. Size:59K  ixys
 ixfr34n80.pdf pdf_icon

IXFR38N80Q2

IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) RDS(on) = 0.24 trr 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS ... See More ⇒

 9.2. Size:248K  ixys
 ixfc36n50p ixfr36n50p.pdf pdf_icon

IXFR38N80Q2

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET RDS(on) 190 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ ... See More ⇒

 9.3. Size:144K  ixys
 ixfr36n60p.pdf pdf_icon

IXFR38N80Q2

IXFR 36N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 20 A Power MOSFET RDS(on) 200 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 9.4. Size:135K  ixys
 ixfc30n60p ixfr30n60p.pdf pdf_icon

IXFR38N80Q2

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET RDS(on) 250 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to... See More ⇒

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Detailed specifications: IXFR30N60P , IXFR32N100P , IXFR32N100Q3 , IXFR32N80P , IXFR32N80Q3 , IXFR34N80 , IXFR36N50P , IXFR36N60P , IRF540N , IXFR40N50Q2 , IXFR40N90P , IXFR44N50P , IXFR44N50Q , IXFR44N60 , IXFR44N80P , IXFR48N50Q , IXFR48N60P .

History: BL3N105-A | P8008BVA

Keywords - IXFR38N80Q2 MOSFET specs

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