3SK100 Datasheet and Replacement

   Type Designator: 3SK100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 0.02 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO252
      - MOSFET Cross-Reference Search