IXFR48N50Q MOSFET Datasheet: N-Ch, 500V, 40A. Full specification with pinout and replacement list

IXFR48N50Q Specs and Replacement

   Type Designator: IXFR48N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: ISOPLUS247

IXFR48N50Q substitution

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IXFR48N50Q datasheet

7.1. Size:144K ixys
ixfr48n60p.pdf pdf_icon

IXFR 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 32 A Power MOSFET RDS(on) 150 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ... See More ⇒

9.1. Size:34K ixys
ixfr44n60.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C38 A G = Gate D = Drain ... See More ⇒

9.2. Size:117K ixys
ixfr40n50q2.pdf pdf_icon

VDSS = 500V HiPerFETTM IXFR40N50Q2 ID25 = 29A Power MOSFET RDS(on) 170m Q2-Class trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V ... See More ⇒

9.3. Size:156K ixys
ixfr44n50q3.pdf pdf_icon

Advance Technical Information HiperFETTM VDSS = 500V IXFR44N50Q3 P wer MOSFET ID25 = 25A Q3-CIass RDS( n) 154m trr 250ns (EIectricaIIy Is Iated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symb I Test C nditi ns Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V G VGSM Transient 40 ... See More ⇒