IXFR90N30 Datasheet. Specs and Replacement
Type Designator: IXFR90N30 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: ISOPLUS247
IXFR90N30 substitution
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IXFR90N30 datasheet
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Detailed specifications: IXFR64N60P, IXFR64N60Q3, IXFR66N50Q2, IXFR70N15, IXFR80N15Q, IXFR80N50P, IXFR80N50Q3, IXFR80N60P3, IRFP250N, IXFT120N15P, IXFT12N100F, IXFT12N50F, IXFT12N90Q, IXFT13N100, IXFT140N10P, IXFT14N80P, IXFT150N17T2
Keywords - IXFR90N30 MOSFET specs
IXFR90N30 cross reference
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