IXFT12N100F Datasheet and Replacement. Cross Reference Search

IXFT12N100F Datasheet (PDF)

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Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

4.2. Size:144K ixys
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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

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VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

Datasheet: IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , IXFR80N50P , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 , IXFT120N15P , K3569 , IXFT12N50F , IXFT12N90Q , IXFT13N100 , IXFT140N10P , IXFT14N80P , IXFT150N17T2 , IXFT15N100Q , IXFT15N100Q3 .