IXFT400N075T2 Datasheet. Specs and Replacement

Type Designator: IXFT400N075T2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1000 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 400 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 420 nC

tr ⓘ - Rise Time: 77 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO268

IXFT400N075T2 substitution

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IXFT400N075T2 datasheet

 0.1. Size:188K  ixys
 ixfh400n075t2-ixft400n075t2.pdf pdf_icon

IXFT400N075T2

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 75V IXFH400N075T2 ID25 = 400A Power MOSFET IXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSS Con... See More ⇒

 8.1. Size:265K  ixys
 ixft40n85xhv ixfh40n85x.pdf pdf_icon

IXFT400N075T2

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT40N85XHV Power MOSFET ID25 = 40A IXFH40N85X RDS(on) 145m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-... See More ⇒

 8.2. Size:122K  ixys
 ixft40n50q.pdf pdf_icon

IXFT400N075T2

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

 8.3. Size:50K  ixys
 ixfh40n30q ixft40n30q.pdf pdf_icon

IXFT400N075T2

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuous 20 V G (TAB) VGSM Transie... See More ⇒

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Detailed specifications: IXFT30N40Q, IXFT30N50P, IXFT30N50Q3, IXFT30N60P, IXFT320N10T2, IXFT340N075T2, IXFT36N50P, IXFT36N60P, IRF1407, IXFT42N50P2, IXFT44N50P, IXFT50N30Q3, IXFT50N60P3, IXFT52N50P2, IXFT58N20, IXFT60N20, IXFT60N20F

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